Light-weight and flexible Ni-doped CuO (Ni:CuO) thin films grown using the cost-effective SILAR method for future technological requests
Journal of Materials Science: Materials in Electronics, vol.33, no.30, pp.23806-23820, 2022 (SCI-Expanded, Scopus)
- Publication Type: Article / Article
- Volume: 33 Issue: 30
- Publication Date: 2022
- Doi Number: 10.1007/s10854-022-09139-z
- Journal Name: Journal of Materials Science: Materials in Electronics
- Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Aerospace Database, Applied Science & Technology Source, Chemical Abstracts Core, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, MEDLINE, Metadex, Civil Engineering Abstracts
- Page Numbers: pp.23806-23820
- Hatay Mustafa Kemal University Affiliated: Yes
Abstract
Products based on nanostructured flexible thin films, which are anticipated to make their way into our lifetimes in the near future. Therefore, nanostructured metal-oxide thin-film materials grown on flexible substrates are anticipated to meet emerging technological requests. In this article, we present a promising light-weight and flexible thin-film material using un-doped and Ni-doped CuO samples. Ni:CuO flexible thin-film materials were fabricated by using the cost-effective SILAR method on cellulose acetate substrates and the effects of both Ni doping and bending on the change in electrical and optoelectronic performances were investigated. It is observed that Ni doping has a great impact on the main physical properties of flexible CuO samples. The optical bandgap value of the un-doped CuO film improves with increasing Ni ratio in the growth bath. Also, sheet resistance values of the un-doped and Ni:CuO samples are a little affected due to bending of samples for bending radius ~ 20 mm. These flexible all solution-processed nanostructured CuO samples are promising candidates for use in future optoelectronic applications.