Pressure dependence of the bandgap bowing in zinc-blende ZnTe1-xSex

Sotto A., Güder H., Pérez-Pastor A., Segura A., Zúñiga J., Muñoz V.

High Pressure Research, vol.22, no.2, pp.257-260, 2002 (SCI-Expanded) identifier

  • Publication Type: Article / Article
  • Volume: 22 Issue: 2
  • Publication Date: 2002
  • Doi Number: 10.1080/08957950212792
  • Journal Name: High Pressure Research
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.257-260
  • Keywords: Gap bowing, II-VI semiconductors, Pressure dependence, Semiconductor alloy
  • Hatay Mustafa Kemal University Affiliated: No

Abstract

We report on the pressure dependence of the bandgap bowing in the ZnTe1-xSex alloy, in the whole composition range. The bandgap bowing parameter is shown to increase almost linearly with pressure from 1.23 at ambient pressure to 1.6 at 7GPa. Saturation effects observed in the pressure dependence for x=0.1 and x=0.2 are shown to be related to the direct-to-indirect crossover. Results are discussed and interpreted in the framework of structural relaxation models for gap bowing. A prediction of these models (the negative bowing of the F15-X1 transition) is shown to be compatible with the fact that the direct-to-indirect crossover pressure increases with the Se content.