Characterization of Al/n-ZnO/p-Si/Al structure with low-cost solution-grown ZnO layer

ÇETİNKAYA S., Çetinkara H., Kahraman S., Bayansal F.

Philosophical Magazine Letters, vol.93, no.9, pp.550-559, 2013 (SCI-Expanded, Scopus) identifier identifier

  • Publication Type: Article / Article
  • Volume: 93 Issue: 9
  • Publication Date: 2013
  • Doi Number: 10.1080/09500839.2013.820362
  • Journal Name: Philosophical Magazine Letters
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.550-559
  • Keywords: diffraction, diode structures, electrical conductivity, microelectronics, optical absorption, SCLC, ZnO
  • Hatay Mustafa Kemal University Affiliated: Yes

Abstract

We report the fabrication of Al/n-ZnO/p-Si/Al diode structures with a flower-like ZnO layer. The average grain size, microstrain and dislocation density in the ZnO layer were determined as 25 nm, 1.55 × 10-3 and 3.23 × 1013 cm-2, respectively. From absorption spectra, the optical band gap was found to be ∼3.17 eV. A red shift was attributed to non-stoichiometry arising from Zn+2 ions substituting for oxygen vacancies. The ideality factor was determined as 1.55. The barrier height was calculated as 0.71 eV from I-V characteristics and 0.73 eV using the Norde plots. © 2013 Copyright Taylor and Francis Group, LLC.