Philosophical Magazine Letters, vol.93, no.9, pp.550-559, 2013 (SCI-Expanded, Scopus)
We report the fabrication of Al/n-ZnO/p-Si/Al diode structures with a flower-like ZnO layer. The average grain size, microstrain and dislocation density in the ZnO layer were determined as 25 nm, 1.55 × 10-3 and 3.23 × 1013 cm-2, respectively. From absorption spectra, the optical band gap was found to be ∼3.17 eV. A red shift was attributed to non-stoichiometry arising from Zn+2 ions substituting for oxygen vacancies. The ideality factor was determined as 1.55. The barrier height was calculated as 0.71 eV from I-V characteristics and 0.73 eV using the Norde plots. © 2013 Copyright Taylor and Francis Group, LLC.